Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate

Journal:

Applied Physics Letters

Published:

2025-08-11

DOI:

10.1063/5.0278306

Affiliations:

1

Authors:

10

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	10.000000 10.000000	1.00

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