High performance annealing-free thin-film transistors with 7-nm In0.72Ga0.28O/13-nm In0.46Ga0.54O homojunction channel

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0278333
Affiliations:
5
Authors:
10
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Institutions Authors Share
Wuhan University (WHU), China
6.500000
 0.65
Micius Laboratory, China
1.500000
 0.15
Anhui University of Science and Technology (AUST), China
1.000000
 0.10
Hubei Jiufengshan Laboratory, China
1.000000
 0.10
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