Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0278392
Affiliations:
3
Authors:
4
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Institutions Authors Share
Research Center for Electronic and Optical Materials, NIMS, Japan
2.500000
 0.63
Research and Services Division of Materials Data and Integrated System (MaDIS), NIMS, Japan
1.000000
 0.25
Meijo University, Japan
0.500000
 0.13
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