Defect-dominated resistive switching of 2D MoTe2 nanosheets for artificial synapses and decimal arithmetic

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0279994
Affiliations:
2
Authors:
7
Go to article
Institutions Authors Share
Sichuan Normal University, China
6.000000
 0.86
Zhejiang University (ZJU), China
1.000000
 0.14
Interested in Nanotechnology?