Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga2O3 on sapphire (0001) by low-pressure Mist-CVD

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0280118
Affiliations:
5
Authors:
9
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Institutions Authors Share
Hong Kong University of Science and Technology (Guangzhou), China
8.750000
 0.97
The Hong Kong University of Science and Technology (HKUST), China
0.250000
 0.03
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