Temperature dependent characterization of 140–180 nm AlGaN/GaN HEMTs using DC and small-signal RF measurements

Journal:

Applied Physics Letters

Published:

2025-08-23

DOI:

10.1063/5.0280968

Affiliations:

4

Authors:

13

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Institutions	Authors	Share
USAF Air Force Research Laboratory (AFRL), United States of America (USA)	5.000000	0.38
BAE Systems, Inc., United States of America (USA)	4.000000	0.31
KBR, United States of America (USA)	3.000000	0.23
Southern Illinois University, Carbondale (SIU), United States of America (USA)	1.000000	0.08

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