Enabling room-temperature ferromagnetism in few-layered MoS2 films via strain engineering

Journal:

Applied Physics Letters

Published:

2025-11-03

DOI:

10.1063/5.0281001

Affiliations:

12

Authors:

15

Go to article

Institutions	Authors	Share
National Tsing Hua University (NTHU), Taiwan	4.833333	0.32
Brookhaven National Laboratory (BNL), United States of America (USA)	3.500000	0.23
National Chung Cheng University (CCU), Taiwan	2.000000	0.13
National Synchrotron Radiation Research Center (NSRRC), Taiwan	2.000000	0.13
National Taiwan University (NTU), Taiwan	1.500000	0.10
Institute of Atomic and Molecular Sciences (IAMS), Academia Sinica, Taiwan	0.500000	0.03
National Sun Yat-Sen University (NSYSU), Taiwan	0.333333	0.02
Korea University, South Korea	0.333333	0.02

Interested in Macromolecular and Materials Chemistry?