Inversion of the internal electric field using delta doping in Al0.3Ga0.7N/GaN heterostructures
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0281035
- Affiliations:
- 2
- Authors:
- 4
| Institutions | Authors | Share |
|---|---|---|
| CEA Laboratory of Electronics and Information Technology (LETI), France | 0.75 | |
| Laboratory for Quantum Photonics, Electronics and Engineering (PHELIQS), France | 0.25 |