Varistructure resistive switching memory devices through dynamical redox of oxides
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0281237
- Affiliations:
- 3
- Authors:
- 13
| Institutions | Authors | Share |
|---|---|---|
| Xidian University, China | 0.54 | |
| National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China | 0.46 |