Catastrophic burnout mechanisms of NiO/β-Ga2O3 heterojunction diodes irradiated by 1.35 GeV high-energy heavy ions

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0281797
Affiliations:
4
Authors:
10
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Institutions Authors Share
Harbin Institute of Technology (HIT), China
6.000000
 0.60
School of Electronic Science and Engineering, NJU, China
3.500000
 0.35
Nanjing University (NJU), China
0.500000
 0.05
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