Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282034
Affiliations:
4
Authors:
10
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Institutions Authors Share
Xidian University, China
8.666667
 0.87
Suzhou Laboratory, China
1.333333
 0.13
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