Removal of Si impurities from GaN regrowth interfaces using XeF2

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282182
Affiliations:
2
Authors:
3
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Institutions Authors Share
University of California, Santa Barbara (UCSB), United States of America (USA)
2.000000
 0.67
Sandia National Laboratories, United States of America (USA)
1.000000
 0.33
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