Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282412
Affiliations:
4
Authors:
10
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Institutions Authors Share
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China
6.833333
 0.68
University of Science and Technology of China (USTC), China
2.500000
 0.25
Suzhou Laboratory, China
0.666667
 0.07
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