High-performance InSnO tunneling contact transistors via oxygen partial pressure modulation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282545
Affiliations:
3
Authors:
9
Go to article
Institutions Authors Share
University of Electronic Science and Technology of China (UESTC), China
6.500000
 0.72
Shenzhen University (SZU), China
2.500000
 0.28
Interested in Electronics, Sensors and Digital Hardware?