Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282593
Affiliations:
7
Authors:
12
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Institutions Authors Share
Wuhan University (WHU), China
8.000000
 0.67
National Key Laboratory of Power Semiconductor and Integration Technology, China
2.500000
 0.21
University of Cambridge, United Kingdom (UK)
1.000000
 0.08
Hunan University (HNU), China
0.500000
 0.04
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