High-performance type-I Sn-doped-Ga2O3/SnSe2 heterojunction photodetectors enabled by Fowler–Nordheim tunneling

Journal:

Applied Physics Letters

Published:

2025-08-11

DOI:

10.1063/5.0282601

Affiliations:

5

Authors:

10

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Institutions	Authors	Share
Zhengzhou University (ZZU), China	4.000000	0.40
South China Normal University (SCNU), China	3.000000	0.30
The Hong Kong University of Science and Technology (HKUST), China	2.000000	0.20
State Key Laboratory of Optoelectronic Materials and Technologies (OEMT), SYSU, China	1.000000	0.10

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