Stable high-temperature operation of E/D-mode tri-gate AlGaN/GaN MIS-HEMTs with digital recess technique for monolithic integration

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282818
Affiliations:
5
Authors:
11
Go to article
Institutions Authors Share
University of Liverpool, United Kingdom (UK)
5.666667
 0.52
Xi'an Jiaotong - Liverpool University (XJTLU), China
4.166667
 0.38
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China
0.500000
 0.05
Zhangjiang Laboratory, China
0.333333
 0.03
Suzhou Laboratory, China
0.333333
 0.03
Interested in Nanotechnology?