Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282836
Affiliations:
5
Authors:
5
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Institutions Authors Share
Centre for III-Nitride Technology (C3NiT), Sweden
3.500000
 0.70
Wallenberg Initiative Material Science for Sustainability (WISE), Sweden
0.750000
 0.15
Stanford University, United States of America (USA)
0.500000
 0.10
Lund University (LU), Sweden
0.250000
 0.05
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