Why does CO2 plasma chamber seasoning favor nanocrystalline silicon growth?

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0282852
Affiliations:
3
Authors:
7
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Institutions Authors Share
Laboratory of Physics of Interfaces and Thin Films (LPICM), France
3.166667
 0.45
Institut Polytechnique de Paris (IP Paris), France
3.166667
 0.45
Ile-de-France Photovoltaic Institute (IPVF), France
0.666667
 0.10
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