Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0283133
Affiliations:
3
Authors:
3
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Institutions Authors Share
National Institute for Materials Science (NIMS), Japan
2.000000
 0.67
Chubu University, Japan
1.000000
 0.33
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