Investigation of the γ-irradiation-induced degradation mechanism of p-channel p-GaN/u-GaN/AlGaN MESFETs

Journal:

Applied Physics Letters

Published:

2025-10-27

DOI:

10.1063/5.0283348

Affiliations:

1

Authors:

9

Go to article

Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	9.000000	1.00

Interested in Nanotechnology?