Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance

Journal:

Applied Physics Letters

Published:

2025-10-13

DOI:

10.1063/5.0283382

Affiliations:

3

Authors:

12

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Institutions	Authors	Share
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, PKU, China	11.333333 11.333333	0.94
CAS Songshan Lake Materials Laboratory, China	0.333333	0.03
Collaborative Innovation Center of Quantum Matter (CICQM), China	0.333333	0.03

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