Negative bias threshold voltage instability and gate reliability in GaN tri-gate HEMTs with ferroelectric charge-trap gate stack
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0283587
- Affiliations:
- 3
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| National Yang Ming Chiao Tung University (NYCU), Taiwan | 0.83 | |
| Indian Institute of Technology Kanpur (IIT Kanpur), India | 0.17 |