Analysis of the single-event effects in iβ/i-Ga2O3 Schottky barrier diodes

Journal:

Applied Physics Letters

Published:

2025-07-28

DOI:

10.1063/5.0283627

Affiliations:

2

Authors:

13

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	10.000000 10.000000	0.77
China Aerospace Components Engineering Center (CACEC), CAST, China	3.000000	0.23

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