Determination of the dependence of long-lived hot-carrier temperature on excitation power and its effect on the radiative decay rate in GaN/InGaN nanodisks

Journal:

Applied Physics Letters

Published:

2025-10-13

DOI:

10.1063/5.0283647

Affiliations:

1

Authors:

4

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Institutions	Authors	Share
Indian Institute of Technology Bombay (IIT Bombay), India	4.000000	1.00

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