Endogenic ion–electron coupling effect in rGO–Fe2O3 heterostructure for optoelectronic neuromorphic memcapacitor

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0284218
Affiliations:
2
Authors:
9
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Institutions Authors Share
Shanghai Normal University (SHNU), China
8.000000
 0.89
University of Southern California (USC), United States of America (USA)
1.000000
 0.11
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