Growth and characterization of high-quality h-BN single-layer films on Si-incorporated Ni (111) via molecular beam epitaxy

Journal:

Applied Physics Letters

Published:

2025-10-13

DOI:

10.1063/5.0284316

Affiliations:

1

Authors:

7

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Institutions	Authors	Share
University of California, Riverside (UCR), United States of America (USA)	7.000000	1.00

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