Enhanced reliability of Hf0.5Zr0.5O2 ferroelectric memory through WOx buffer layer to minimize oxygen vacancies

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0284623
Affiliations:
3
Authors:
9
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Institutions Authors Share
Nanjing University of Science and Technology (NUST), China
6.000000
 0.67
Nanjing National Laboratory of Microstructures (NNLM), NJU, China
2.000000
 0.22
South China Normal University (SCNU), China
1.000000
 0.11
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