Longitudinal position dependence of dark line defect growth rate in high-power diode lasers at 790 nm

Journal:

Applied Physics Letters

Published:

2025-10-13

DOI:

10.1063/5.0284971

Affiliations:

4

Authors:

14

Go to article

Institutions	Authors	Share
Lawrence Livermore National Laboratory (LLNL), United States of America (USA)	6.000000	0.43
Leonardo Electronics US Inc., United States of America (USA)	6.000000	0.43
University of Michigan (U-M), United States of America (USA)	2.000000	0.14

Interested in Classical Physics?