Effects of nitrogen passivation on the capture cross section energy distribution of 4H-SiC/SiO2 interface defects and the temperature dependences of leakage current
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0285027
- Affiliations:
- 4
- Authors:
- 12
| Institutions | Authors | Share |
|---|---|---|
| College of Physics, SCU, China | 0.54 | |
| Sichuan University (SCU), China | 0.21 | |
| Sichuan Xu Mao Micro Technology, China | 0.17 | |
| China Academy of Engineering Physics (CAEP), China | 0.08 |