Field-free magnetization switching of synthetic antiferromagnets magnetic tunnel junction induced by spatially gradient spin texture

Journal:

Applied Physics Letters

Published:

2025-11-03

DOI:

10.1063/5.0285459

Affiliations:

6

Authors:

10

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Institutions	Authors	Share
Institute of Microelectronics (IME), CAS, China	7.333333	0.73
CAS Songshan Lake Materials Laboratory, China	0.833333	0.08
Institute of Physics (IOP), CAS, China	0.833333	0.08
University of Chinese Academy of Sciences (UCAS), China	0.666667	0.07
MOE Key Laboratory for Magnetism and Magnetic Materials, LZU, China	0.333333	0.03

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