Orientation-dependent β-Ga2O3 heterojunction diode with atomic layer deposition (ALD) NiO

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0285622
Affiliations:
2
Authors:
4
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Institutions Authors Share
University of California, Santa Barbara (UCSB), United States of America (USA)
2.000000
 0.50
Oregon State University, United States of America (USA)
2.000000
 0.50
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