Achieving giant tunneling electroresistance ratio of up to 109% in sliding ferroelectric tunnel junctions based on MoGe2N4 bilayer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0285671
Affiliations:
2
Authors:
5
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Institutions Authors Share
Shandong Normal University (SDNU), China
4.000000
 0.80
Hubei Provincial Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, China
1.000000
 0.20
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