Thermal boundary resistance measurement of GaN/Al2O3 interfaces based on heat source thermometry separation integrated chip

Journal:

Applied Physics Letters

Published:

2025-09-15

DOI:

10.1063/5.0285682

Affiliations:

4

Authors:

8

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Institutions	Authors	Share
Beijing University of Technology (BJUT), China	5.000000	0.63
Key Laboratory of Intelligent Space TTCO, PLA Space Engineering University, China	1.000000	0.13
Hebei Semiconductor Research Institute (CETC13), China	1.000000	0.13
Institute of Microelectronics (IME), CAS, China	1.000000	0.13

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