Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0285927
- Affiliations:
- 5
- Authors:
- 10
| Institutions | Authors | Share |
|---|---|---|
| University of Science and Technology Beijing (USTB), China | 0.80 | |
| Beijing National Laboratory for Condensed Matter Physics, IOP CAS, China | 0.10 | |
| College of Engineering, PKU, China | 0.10 |