Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0285927
Affiliations:
5
Authors:
10
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Institutions Authors Share
University of Science and Technology Beijing (USTB), China
8.000000
 0.80
Beijing National Laboratory for Condensed Matter Physics, IOP CAS, China
1.000000
 0.10
College of Engineering, PKU, China
1.000000
 0.10
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