Atomic layer etching of TiN by oxidation and SF6-H2 plasma exposure: ALE window defined by HF, H, and F

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0285942
Affiliations:
2
Authors:
7
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Institutions Authors Share
Eindhoven University of Technology (TU/e), Netherlands
6.000000
 0.86
Oxford Instruments, United Kingdom (UK)
1.000000
 0.14
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