High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0285958
Affiliations:
5
Authors:
16
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Institutions Authors Share
Innovations for High Performance Microelectronics (IHP), Germany
8.500000
 0.53
Jülich-Aachen Research Alliance (JARA), Germany
4.000000
 0.25
University of Regensburg (UR), Germany
2.000000
 0.13
ARQUE Systems GmbH, Germany
1.000000
 0.06
University of Roma Tre, Italy
0.500000
 0.03
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