Improving electrical properties of metal–semiconductor contact on Al-rich n-AlGaN by multi-step annealing

Journal:

Applied Physics Letters

Published:

2025-10-27

DOI:

10.1063/5.0285985

Affiliations:

4

Authors:

15

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Institutions	Authors	Share
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, PKU, China	13.166667 13.166667	0.88
Peking University (PKU), China	0.666667	0.04
Collaborative Innovation Center of Quantum Matter (CICQM), China	0.666667	0.04
Beijing SinoGaN Semiconductor Technology Co., Ltd, China	0.500000	0.03

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