2 kV β-Ga2O3 Schottky diode with HfO2/SiO2 dual-layer field plate and mesa termination
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0287147
- Affiliations:
- 3
- Authors:
- 8
| Institutions | Authors | Share |
|---|---|---|
| Xidian University, China | 0.58 | |
| National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China | 0.42 |