The effect of doping layers position on the heterojunction sharpness in (In,Al)As/AlAs quantum dots

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0287191
Affiliations:
4
Authors:
3
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Institutions Authors Share
TU Dortmund University, Germany
1.500000
 0.50
A.V. Rzhanov Institute of Semiconductor Physics (ISP), SB RAS, Russia
1.000000
 0.33
Ioffe Institute, RAS, Russia
0.500000
 0.17
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