Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs

Journal:

Applied Physics Letters

Published:

2025-09-15

DOI:

10.1063/5.0287320

Affiliations:

4

Authors:

12

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	9.500000	0.79
China Aerospace Science and Technology Corporation (CASC), China	1.500000	0.13
Lanzhou Jiaotong University (LZJTU), China	0.500000	0.04
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China	0.500000	0.04

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