Research on the interface characteristics and leakage mechanisms of β-Ga2O3 MFIS capacitors using an HfO2–ZrO2 superlattice layer

Journal:

Applied Physics Letters

Published:

2025-09-22

DOI:

10.1063/5.0287669

Affiliations:

4

Authors:

14

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	9.500000	0.68
China Academy of Space Technology (CAST), CASC, China	3.000000	0.21
National Center of Technology Innovation for Wide-Bandgap Semiconductors of Nanjing, China	1.000000	0.07
Xidian University, China	0.500000	0.04

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