Defect-annealing-induced optical gain recovery in electron-irradiated 4H-SiC UV phototransistors

Journal:

Applied Physics Letters

Published:

2025-09-08

DOI:

10.1063/5.0287853

Affiliations:

6

Authors:

8

Go to article

Institutions	Authors	Share
School of Electronic Science and Engineering, NJU, China	2.000000	0.25
State Key Laboratory of Silicon and Advanced Semiconductor Materials, ZJU, China	1.333333	0.17
ZJU-Hangzhou Global Scientific and Technological Innovation Center, China	1.333333	0.17
Zhejiang University (ZJU), China	1.333333	0.17
Wuxi University, China	1.000000	0.13
Guangxi University (GXU), China	1.000000	0.13

Interested in Electronics, Sensors and Digital Hardware?