In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0288080
- Affiliations:
- 5
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Fuzhou University (FZU), China | 0.50 | |
| Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, China | 0.28 | |
| Kunming University of Science and Technology (KUST), China | 0.11 | |
| Lingnan University, China | 0.11 |