Enhancement of thermoelectric performance in Bi2S3 enabled by pressure-induced electronic topological transition

Journal:

Applied Physics Letters

Published:

2025-09-08

DOI:

10.1063/5.0288494

Affiliations:

3

Authors:

13

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Institutions	Authors	Share
State Key Laboratory of High Pressure and Superhard Materials, JLU, China	11.000000 11.000000	0.85
Luoyang Normal University, China	1.000000	0.08
Ningbo University (NBU), China	1.000000	0.08

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