Experimental and simulation analysis of single event effects on lateral depletion-mode 𝛃 -Ga2O3 MOSFETs

Journal:

Applied Physics Letters

Published:

2025-11-17

DOI:

10.1063/5.0288527

Affiliations:

5

Authors:

13

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Institutions	Authors	Share
Institute of Microelectronics (IME), CAS, China	4.000000	0.31
Beijing Microelectronics Technology Institute (BMTI), CASC, China	4.000000	0.31
University of Chinese Academy of Sciences (UCAS), China	2.000000	0.15
Harbin Institute of Technology (HIT), China	2.000000	0.15
Hebei Semiconductor Research Institute (CETC13), China	1.000000	0.08

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