Fabrication of high-brightness silicon vacancy color-center ensembles in 4H-SiC via MeV particles
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0288542
- Affiliations:
- 2
- Authors:
- 12
| Institutions | Authors | Share |
|---|---|---|
| State Key Laboratory of Nuclear Physics and Technology (SKLNPT), China | 0.96 | |
| Peking University (PKU), China | 0.04 |