Tracing fabricated defects with ultrafast photocarrier dynamics in undoped GaN films

Journal:

Applied Physics Letters

Published:

2025-11-17

DOI:

10.1063/5.0288615

Affiliations:

5

Authors:

9

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Institutions	Authors	Share
ShanghaiTech University, China	3.500000	0.39
Shanghai Advanced Research Institute (SARI), CAS, China	2.000000	0.22
Henan Normal University, China	1.500000	0.17
Institute of Semiconductors (IOS), CAS, China	1.000000	0.11
Tiangong University (TGU), China	1.000000	0.11

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