Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0288670
Affiliations:
3
Authors:
15
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Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
6.500000
 0.43
University of Chinese Academy of Sciences (UCAS), China
6.500000
 0.43
Xidian University, China
2.000000
 0.13
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