Engineering ferroelectric interfaces: Delta-doping and millisecond flash lamp annealing for enhancing polarization properties in TiN/Al:HfO2/TiN capacitors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0288781
Affiliations:
2
Authors:
9
Go to article
Institutions Authors Share
University of Hyogo, Japan
4.500000
 0.50
SCREEN Semiconductor Solutions, Japan
4.500000
 0.50
Interested in Macromolecular and Materials Chemistry?